AGMSEMI AGM60P30A

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P30A

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)9.8nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)63mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)740pF

Technical details

60V 30A 1.2V 35W 63mΩ@4.5V 1 P-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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