AGMSEMI AGM60P20EY

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P20EY

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Specifications

Gate Charge(Qg)10.5nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)80pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation8.5W
Reverse Transfer Capacitance (Crss@Vds)3.9pF
RDS(on)54mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)525pF

Technical details

60V 8A 8.5W Surface Mount SOT-89-3

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