AGMSEMI AGM60P130H

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P130H

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Specifications

Gate Charge(Qg)85.6nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)872pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation180W
RDS(on)7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)65pF
Number1 P-Channel
Input Capacitance(Ciss)5.55nF
TypeP-Channel

Technical details

P-Channel 60V 130A 180W Surface Mount TO-263

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