AGMSEMI AGM60P06S

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P06S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)48mΩ@10V;67mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.2nF
TypeP-Channel

Technical details

P-Channel 60V 5.7A 2.5W Surface Mount SOP-8

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