AGMSEMI AGM609F

AGMSEMI · FETs & Power MOSFETs · MPN AGM609F

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)52.1nC@10V
Output Capacitance(Coss)442pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)6.3mΩ@10V;8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.481nF

Technical details

N-Channel 60V 80A 62.5W Through Hole TO-220F

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