AGMSEMI AGM609D

AGMSEMI · FETs & Power MOSFETs · MPN AGM609D

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Specifications

Gate Charge(Qg)52.1nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)6.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.47nF

Technical details

N-Channel 60V 60A 62.5W Surface Mount TO-252

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