AGMSEMI AGM608D

AGMSEMI · FETs & Power MOSFETs · MPN AGM608D

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)428pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.58nF
Type-

Technical details

60V 80A 54W Surface Mount TO-252

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