AGMSEMI AGM6080C

AGMSEMI · FETs & Power MOSFETs · MPN AGM6080C

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)217pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)196pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.28nF

Technical details

N-Channel 60V 80A 89W Through Hole TO-220C

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