AGMSEMI AGM605Q

AGMSEMI · FETs & Power MOSFETs · MPN AGM605Q

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)976pF

Technical details

N-Channel 60V 58A 50W Surface Mount PDFN-8(5x6)

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