AGMSEMI AGM605F

AGMSEMI · FETs & Power MOSFETs · MPN AGM605F

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)44.5nC@0V
Output Capacitance(Coss)434pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.329nF
TypeN-Channel

Technical details

N-Channel 60V 80A 70W Through Hole TO-220F

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