AGMSEMI AGM605C

AGMSEMI · FETs & Power MOSFETs · MPN AGM605C

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)44.5nC
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.413nF

Technical details

60V 80A 1.2V 70W 4.5mΩ@4.5V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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