AGMSEMI AGM603F

AGMSEMI · FETs & Power MOSFETs · MPN AGM603F

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)66.1nC@10V
Output Capacitance(Coss)1.208nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.645nF

Technical details

N-Channel 60V 130A 140W Through Hole TO-220F

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