AGMSEMI AGM603D

AGMSEMI · FETs & Power MOSFETs · MPN AGM603D

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Specifications

Gate Charge(Qg)66.1nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.666nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)77.7pF
RDS(on)2.8mΩ@10V;3.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.377nF

Technical details

N-Channel 60V 130A 140W Surface Mount TO-252

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