AGMSEMI AGM55P10F

AGMSEMI · FETs & Power MOSFETs · MPN AGM55P10F

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Specifications

Gate Charge(Qg)773nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation50W
RDS(on)52mΩ@10V

Technical details

100V 30A 50W Through Hole TO-220F

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