AGMSEMI · FETs & Power MOSFETs · MPN AGM55P10D
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| Gate Charge(Qg) | 773nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 52mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.507nF |
P-Channel 100V 30A 50W Surface Mount TO-252