AGMSEMI AGM55P10C

AGMSEMI · FETs & Power MOSFETs · MPN AGM55P10C

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Specifications

Gate Charge(Qg)773nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)97pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)52mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.507nF

Technical details

P-Channel 100V 38A 50W Through Hole TO-220

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