AGMSEMI AGM55P10A

AGMSEMI · FETs & Power MOSFETs · MPN AGM55P10A

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Specifications

Gate Charge(Qg)773nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)112pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)96pF
RDS(on)64mΩ@10V;70mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.517nF

Technical details

100V 30A 50W Surface Mount PDFN-8L(5x6)

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