AGMSEMI AGM435E

AGMSEMI · FETs & Power MOSFETs · MPN AGM435E

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Specifications

Gate Charge(Qg)5.2nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)480pF

Technical details

N-Channel 40V 5A 1.2W Surface Mount SOT-23-3

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