AGMSEMI · FETs & Power MOSFETs · MPN AGM425ME
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| Gate Charge(Qg) | 10nC@10V;14nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 6.6A;3.3A |
| Output Capacitance(Coss) | 42pF;90pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF;70pF |
| RDS(on) | 25mΩ@10V;65.5mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 495pF;600pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 40V 6.6A 3.3A 1.25W Surface Mount SOT-23-6L