AGMSEMI AGM425MD

AGMSEMI · FETs & Power MOSFETs · MPN AGM425MD

No reviews yet — be the first to review AGMSEMI AGM425MD.

Specifications

Gate Charge(Qg)5.5nC@4.5V;17nC@10V
Drain to Source Voltage40V;40V
Output Capacitance(Coss)65pF;87pF
Current - Continuous Drain(Id)23A;20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V;1.5V
Pd - Power Dissipation25W;27.8W
Reverse Transfer Capacitance (Crss@Vds)53pF;77pF
RDS(on)15mΩ@10V;32mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)715pF;880pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 40V 23A 27.8W Surface Mount TO-252-4

Related FETs & Power MOSFETs