AGMSEMI AGM425M

AGMSEMI · FETs & Power MOSFETs · MPN AGM425M

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Specifications

Gate Charge(Qg)10nC@10V;14nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)42pF;90pF
Current - Continuous Drain(Id)6.6A;5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)33pF;70pF
RDS(on)18mΩ@10V;30mΩ@4.5V;50mΩ@10V;65mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)495pF;600pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 40V 6.6A 2.5W Surface Mount SOP-8

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