AGMSEMI AGM420MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM420MAP

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Specifications

Gate Charge(Qg)8.9nC@10V;20nC@10V
Drain to Source Voltage40V;40V
Output Capacitance(Coss)82pF;105pF
Current - Continuous Drain(Id)13.5A;10.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V;1.6V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)43pF;64pF
RDS(on)16mΩ@10V;42mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)516pF;750pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 40V 13.5A 25W Surface Mount PDFN-8(3.3x3.3)

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