AGMSEMI AGM418MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM418MAP

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Specifications

Gate Charge(Qg)8.9nC@10V;20nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)82pF;115pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)43pF;95pF
RDS(on)18mΩ@10V;20mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)616pF;1.572nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 40V 18A 25W Surface Mount PDFN-8(3.3x3.3)

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