AGMSEMI AGM418M

AGMSEMI · FETs & Power MOSFETs · MPN AGM418M

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Specifications

Gate Charge(Qg)8.9nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)18mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)660pF
TypeN-Channel

Technical details

N-Channel Array 40V 8A 2.5W Surface Mount SOP-8

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