AGMSEMI AGM412MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM412MAP

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)10mΩ@10V;14mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.195nF

Technical details

N-Channel Array 40V 22A 35W Surface Mount PDFN-8(3.3x3.3)

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