AGMSEMI AGM40P65E

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P65E

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)70mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)600pF
Vgs±20V

Technical details

P-Channel 40V 2A 1.4W Surface Mount SOT-23-3

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