AGMSEMI AGM40P65AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P65AP

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)56mΩ@10V;72mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)600pF

Technical details

P-Channel 40V 12A 18W Surface Mount PDFN-8(3.3x3.3)

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