AGMSEMI AGM40P55AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P55AP

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)203pF
RDS(on)8.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.837nF

Technical details

P-Channel 40V 50A 55W Surface Mount PDFN-8(3.3x3.3)

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