AGMSEMI AGM40P35D

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P35D

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Specifications

Gate Charge(Qg)72nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)248pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.66nF

Technical details

P-Channel 40V 60A 30W Surface Mount TO-252

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