AGMSEMI AGM40P35AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P35AP

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Specifications

Gate Charge(Qg)72nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.6nF
TypeP-Channel

Technical details

P-Channel 40V 60A 30W Surface Mount PDFN(3.3x3.3)

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