AGMSEMI AGM40P30A

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P30A

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation59W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)23mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.12nF

Technical details

P-Channel 40V 38A 59W Surface Mount PDFN5x6-8

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