AGMSEMI AGM40P26E

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P26E

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)36mΩ@10V;45mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF

Technical details

P-Channel 40V 5.8A 1.25W Surface Mount SOT23-3

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