AGMSEMI · FETs & Power MOSFETs · MPN AGM40P26AP
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 32mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF |
40V 6A 1.2V 2.2W 32mΩ@10V 1 P-Channel PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS