AGMSEMI AGM40P25AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P25AP

No reviews yet — be the first to review AGMSEMI AGM40P25AP.

Specifications

Drain to Source Voltage40V
Gate Charge(Qg)19.3nC@10V
Output Capacitance(Coss)63.6pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)48.6pF
RDS(on)36mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.021nF
TypeP-Channel

Technical details

P-Channel 40V 19A 34W PDFN3.3x3.3-8

Related FETs & Power MOSFETs