AGMSEMI AGM40P100D

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P100D

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Specifications

Gate Charge(Qg)116nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation175W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)4.6mΩ@10V;6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.628nF

Technical details

40V 130A 175W Surface Mount TO-252

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