AGMSEMI AGM40P100C

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P100C

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)106nC@10V
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)4.6mΩ@10V;6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.7nF

Technical details

P-Channel 40V 140A 200W Through Hole TO-220C

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