AGMSEMI AGM40P100A

AGMSEMI · FETs & Power MOSFETs · MPN AGM40P100A

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Specifications

Gate Charge(Qg)106nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation173W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)4.6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.628nF

Technical details

P-Channel 40V 130A 173W Surface Mount PDFN(5x6)

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