AGMSEMI AGM40N20F

AGMSEMI · FETs & Power MOSFETs · MPN AGM40N20F

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)97nC@10V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)47mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
Type-

Technical details

200V 40A 100W Through Hole TO-220F

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