AGMSEMI AGM403DG

AGMSEMI · FETs & Power MOSFETs · MPN AGM403DG

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Specifications

Gate Charge(Qg)13.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)101A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)842pF

Technical details

40V 101A 2.5V 28W 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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