AGMSEMI AGM403D1

AGMSEMI · FETs & Power MOSFETs · MPN AGM403D1

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)363pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.156nF

Technical details

N-Channel 40V 120A 105W Surface Mount TO-252

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