AGMSEMI AGM403AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM403AP

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)74pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

N-Channel 40V 65A 69W Surface Mount PDFN3.3x3.3

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