AGMSEMI AGM403A1-M1

AGMSEMI · FETs & Power MOSFETs · MPN AGM403A1-M1

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Specifications

Gate Charge(Qg)65nC@10V
Configuration-
Drain to Source Voltage40V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)293pF
RDS(on)6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.341nF

Technical details

N-Channel 40V 100A 62.5W Surface Mount PDFN5x6-8

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