AGMSEMI AGM402D-G

AGMSEMI · FETs & Power MOSFETs · MPN AGM402D-G

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.712nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.565nF

Technical details

N-Channel 40V 120A 96W Surface Mount TO-252

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