AGMSEMI AGM401C

AGMSEMI · FETs & Power MOSFETs · MPN AGM401C

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Specifications

Gate Charge(Qg)134.2nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)220A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)650pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)5.755nF

Technical details

N-Channel 40V 220A 167W Through Hole TO-220

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