AGMSEMI AGM3P06E

AGMSEMI · FETs & Power MOSFETs · MPN AGM3P06E

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2.5A
Output Capacitance(Coss)58pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.25W
RDS(on)110mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 P-Channel
Input Capacitance(Ciss)315pF
TypeP-Channel

Technical details

P-Channel 60V 2.5A 1.25W Surface Mount SOT-23-3

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