AGMSEMI AGM3416E

AGMSEMI · FETs & Power MOSFETs · MPN AGM3416E

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Specifications

Drain to Source Voltage19.5V
Gate Charge(Qg)9.1nC@4.5V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)10mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)854pF

Technical details

N-Channel 19.5V 6.5A 1.25W Surface Mount SOT-23-3

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