AGMSEMI AGM3415E

AGMSEMI · FETs & Power MOSFETs · MPN AGM3415E

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8.8nC@10V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.32W
RDS(on)28mΩ@4.5V;38mΩ@2.5V
Number1 P-Channel

Technical details

P-Channel 20V 5A 1.32W Surface Mount SOT-23-3

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