AGMSEMI AGM3407EL

AGMSEMI · FETs & Power MOSFETs · MPN AGM3407EL

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6.5nC@10V
Configuration-
Output Capacitance(Coss)89pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)560pF

Technical details

P-Channel 30V 4.2A 1.25W Surface Mount SOT-23

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