AGMSEMI AGM3407E

AGMSEMI · FETs & Power MOSFETs · MPN AGM3407E

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Specifications

Gate Charge(Qg)6.5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)530pF

Technical details

P-Channel 30V 4.2A 1.2W Surface Mount SOT-23-3

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