AGMSEMI AGM325ME

AGMSEMI · FETs & Power MOSFETs · MPN AGM325ME

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Specifications

Gate Charge(Qg)4.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)54.5pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.15W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)17mΩ@10V;26mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)390pF
TypeN-Channel

Technical details

N-Channel Array 30V 5.5A 1.15W Surface Mount SOT-23-6

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